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Samsung SSD 840 EVO
(NAND based Solid State Drive) |
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Samsung SSD 840 EVO
Series
- SSD 840 EVO 2.5 inch
- SSD 840 EVO mSATA
SSD 840 EVO 2.5 inch
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PART NUMBER |
Capacity |
Photo |
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MZ-7TE1T0BW |
1TB |
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MZ-7TE500BW |
500GB |
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MZ-7TE250BW |
250GB |
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MZ-7TE120BW |
120GB |
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Samsung SSD 840 EVO |
Summary
- 2.5” SATA 6Gb/s SSD for Desktop & Laptop PC
- Samsung 3-core MEX controller
- Samsung 1x nm Toggle DDR 2.0 NAND Flash memory
- Up to 1GB Samsung Low Power DDR2 SDRAM cache memory
- Samsung Magician 4.2 Software for SSD management
- Samsung Data Migration 2.0 Software
- 7mm profile
The must-have solution for your PC upgrade
The evolution of the SSD has arrived as the Samsung SSD 840 EVO with more speed, more reliability and much easier upgrade tools. Combining the best SSD technology from Samsung, 840 EVO delivers a superior computing experience.
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Faster performance for everyday use
The market-leading 840 Series SSD was significantly improved upon in the 840 EVO. Samsung’s new TurboWrite technology delivers dramatically faster sequential write performance. And, with upgrades to NAND, a new controller and firmware, the 840 EVO has superfast responsiveness under everyday workloads.
Proven quality and trusted reliability
Samsung’s unparalleled end-to-end integration allows us to deliver a reliable, high-performance 2nd generation 3-bit MLC SSD. The upgraded firmware and advanced signal processing guarantees the same level of endurance and reliability as our previous generation, while improving performance. The 840EVO’s ultra-low power consumption helps extend laptop battery life longer than before.
In addition, Samsung’s “Dynamic Thermal Guard” algorithm in 840 EVO maintains optimal operating temperature for the drive.
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Samsung SSD 840 EVO Technical Specifications |
Form Factor |
2.5-inch |
Usage Application |
Client PCs* |
Capacity |
120GB, 250GB, 500GB,1TB |
Dimensions (LxWxH) |
100 x 69.85 x 6.8 (mm) |
Interface |
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s) |
Controller |
Samsung 3-core MEX Controller |
NAND Flash Memory |
1x nm Samsung Toggle DDR 2.0 NAND Flash Memory (400Mbps) |
DRAM Cache Memory |
256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2 |
Performance** |
Sequential Read: |
Max. 540 MB/s |
Sequential Write***: |
Max. 520 MB/s (250GB/500GB/750GB/1TB)
Max. 410 MB/s (120GB) |
4KB Random Read (QD1): |
Max. 10,000 IOPS |
4KB Random Write(QD1): |
Max. 33,000 IOPS |
4KB Random Read(QD32): |
Max. 98,000 IOPS (500GB/750GB/1TB)
Max. 97,000 IOPS (250GB)
Max. 94,000 IOPS (120GB) |
4KB Random Write(QD32): |
Max. 90,000 IOPS (500GB/750GB/1TB)
Max. 66,000 IOPS (250GB)
Max. 35,000 IOPS (120GB) |
TRIM Support |
Yes (Requires OS Support) |
Garbage Collection |
Yes |
S.M.A.R.T |
Yes |
Security |
AES 256-bit Full Disk Encryption (FDE) |
Weight |
Max. 53g (1TB) |
Reliability |
MTBF: 1.5 million hours |
Power Consumption |
Average : 0.1W **** (Typical)
Idle : 0.045W (Typical, DIPM ON) |
Temperature |
Operating: 0°C to 70°C
Non-Operating: -55°C to 95°C |
Humidity |
5% to 95%, non-condensing |
Vibration |
Non-Operating: 20~2000Hz, 20G |
Shock |
Non-Operating:
1500G , duration 0.5m sec, 3 axis |
Etc. |
Worldwide Name (WWN), LED Indicator support |
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SSD 840 EVO mSATA
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PART NUMBER |
Capacity |
Photo |
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MZ-MTE1T0 |
1TB |
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MZ-MTE500 |
500GB |
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MZ-MTE250 |
250GB |
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MZ-MTE120 |
120GB |
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Samsung SSD 840 EVO mSATA Technical Specifications |
Form Factor |
mSATA |
Usage Application |
Client PCs* (Ultra-thin PCs compatible) |
Capacity |
120GB, 250GB, 500GB,1TB |
Dimensions (LxWxH) |
(29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) |
Interface |
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s) |
Controller |
Samsung 3-core MEX Controller |
NAND Flash Memory |
1x nm Samsung Toggle DDR 2.0 NAND Flash Memory (400Mbps) |
DRAM Cache Memory |
256MB (120GB) or 512MB (250GB & 500GB) or
1GB (750 & 1TB) LPDDR2 |
Performance** |
Sequential Read: |
Max. 540MB/s |
Sequential Write***: |
Max. 520MB/s |
4KB Random Read (QD1): |
Max. 10,000 IOPS |
4KB Random Write(QD1): |
Max. 40,000 IOPS (250GB/500GB/ 1TB)
Max. 37,000 IOPS (120GB) |
4KB Random Read(QD32): |
Max. 97,000 IOPS (250GB/500GB/ 1TB)
Max. 95,000 IOPS (120GB) |
4KB Random Write(QD32): |
Max. 88,000 (500GB / 1TB)
Max. 71,000 IOPS (250GB)
Max. 37,000 IOPS (120GB) |
TRIM Support |
Yes (Requires OS Support) |
Garbage Collection |
Yes |
S.M.A.R.T |
Yes |
Security |
AES 256-bit Encryption
TCG Opal 2.0 / IEEE1667 compliant |
Weight |
Max. 10g (1TB) |
Reliability |
MTBF : 1.5 million hours |
Power Consumption |
Average : 0.103W**** (Typical), Idle : 0.033W (Typical, DIPM ON)
Device Sleep : 2mW |
Temperature |
Operating : 0°C to 70°C
Non-Operating : -40°C to 85°C
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Humidity |
5% to 95%, non-condensing |
Vibration |
Non-Operating : 20~2000Hz, 20G |
Shock |
Non-Operating : 1500G , duration 0.5m sec, 3 axis |
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